surface mount switching multi-chip diode array mechanical data: * case : sot-363 * fast switching speed * ultra-small surface mount package * for general purpose switching applications * high conductance power dissipation * case material : molded plastic. ul flammability classification ration 94v-0 * moisture sensitivity : level 1 per j -std-020c * terminals : solderable per mil-std-202, method 208 * polarity : see diagram * weight : 0.006 grams(appro) features: weitron bas16tdw multi-chip diodes 150m amperes 75 volts http://ww w .weitron.com.tw 1/3 rev.a 20-oct-09 so t -363 1 2 3 6 5 4 so t -363 outline dimensions unit:mm 1 2 3 a k j m l 6 5 4 b d h e c dim a b c d e h j k l m min 0.10 1.15 2.00 0.30 1.80 - 0.80 0.25 0.10 0.65 ref max 0.30 1.35 2.20 0.40 2.20 0.10 1.10 0.40 0.25 so t -363 lead(pb)- f r ee p b
weitron http://www .weitron.com.tw 2/3 maximum ratings @ t a = 2 5c unless otherwise specified electrical characteristics non-repetitive peak reverse voltage notes:1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch v rm notes:2. short duration test pulse used to minimize self-heatin g e ect. reverse current (note 2) v r = 75v v r = 75v, tj = 150c v r = 25v, tj = 150c v r = 20v reverse recovery time i f = i r =10 m a, i rr =0.1 x i r , r l =100 v ( b r ) r v f i r c t t r r bas16tdw rev.a 20-oct-09 characteristic symbo l value unit 100 v peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 75 v rms reverse voltage v r(rms) 53 v forward continuous current (note 1) i fm 300 m a average recti?ed output current (note 1) i o 150 m a non-repetitive peak forward surge current@ t = 1.0s @ t = 1.0s i fsm 2.0 1.0 a power dissipation (note 1) p d 200 m w thermal resistant junction to ambient air (note 1) r ja 625 c/w operating temperature range storage temperature range t j t stg +150 -55 to +150 c c @ t a = 2 5 c unless otherwise s pecified characteristic symbo l mi n ma x unit reverse breakdown voltage (note 2) i r = 100a 75 - v forward voltage (note 2) i f = 1.0ma i f = 10ma i f = 50ma i f = 150ma - - - - 0.715 0.855 1.0 1.25 v - 1.0 50 30 25 a a a na total capacitance v r = 0v, f = 1.0mhz - 2.0 pf - 4.0 ns
k a 2 bas16tdw mmbd4148tdw device marking item 3 bas16tdw rev.a 20-oct-09 weitron http://ww w .weitron.com.tw 3/3 typical characteristics marking eqivalent circuit diagram 6 1 5 2 4 100 10 1.0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 t a = 85c t a = 25c t a = ? 40c t a = 150c t a = 125c t a = 85c t a = 55c t a = 25c 01 0 2 0 3 0 4 0 5 0 10 1.0 0.1 0.01 0.001 02 4 6 8 0.68 0.64 0.60 0.56 0.52 i f , for w ard current (ma) c d , diode cap acit ance (pf) v f , for w ard vol t age (vol ts) figure 2. forward v oltage v r , reverse vol t age (vol ts) figure 3. leakage current v r , reverse vol t age (vol ts) figure 4. capacitance i r , reverse current ( a)
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